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d a t a sh eet product speci?cation supersedes data of 2000 feb 17 2000 mar 06 discrete semiconductors blf2047l/90 uhf power ldmos transistor b ook, halfpage m3d379
2000 mar 06 2 philips semiconductors product speci?cation uhf power ldmos transistor blf2047l/90 features high power gain easy power control excellent ruggedness source on underside eliminates dc isolators, reducing common mode inductance designed for broadband operation (1.8 to 2.0 ghz) internal input and output matching for high gain and efficiency. applications common source class-ab operation for pcn and pcs applications in the 1800 to 2000 mhz frequency range. description silicon n-channel enhancement mode lateral d-mos transistors encapsulated in a 2-lead sot502a flange package with a ceramic cap. the common source is connected to the mounting flange. pinning pin description 1 drain 2 gate 3 source, connected to ?ange handbook, halfpage top view mbk394 1 2 3 fig.1 simplified outline sot502a. quick reference data rf performance at t h =25 c in a common source test circuit. limiting values in accordance with the absolute maximum rating system (iec 60134). mode of operation f (mhz) v ds (v) p l (w) g p (db) h d (%) d im (dbc) two-tone, class-ab f 1 = 2000; f 2 = 2000.1 26 90 (pep) >10.5 >30 - 25 symbol parameter min. max. unit v ds drain-source voltage - 65 v v gs gate-source voltage - 15 v i d dc drain current - 12 a t stg storage temperature - 65 +150 c t j junction temperature - 200 c caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. for further information, refer to philips specs.: snw-eq-608, snw-fq-302a and snw-fq-302b.
2000 mar 06 3 philips semiconductors product speci?cation uhf power ldmos transistor blf2047l/90 thermal characteristics note 1. determined under specified rf operating conditions, based on maximum junction temperature. characteristics t j =25 c unless otherwise speci?ed. note 1. the value of capacitance is that of the die only. symbol parameter conditions value unit r th j-h thermal resistance from junction to heatsink t h =25 c; p tot = 92 w; note 1 0.81 k/w symbol parameter conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 2.1 ma 65 -- v v gsth gate-source threshold voltage v ds = 10 v; i d = 210 ma 1.5 - 3.5 v i dss drain-source leakage current v gs = 0; v ds =26v -- 15 m a i dsx on-state drain current v gs =v gsth +9v; v ds =10v 27 -- a i gss gate leakage current v gs = 15 v; v ds =0 -- 38 na g fs forward transconductance v ds = 10 v; i d = 7.5 a - 6.0 - s r dson drain-source on-state resistance v gs =v gsth +9v; i d = 7.5 a - 0.11 -w c rss feedback capacitance v gs =0;v ds = 26 v; f = 1 mhz; note 1 - 5.1 - pf
2000 mar 06 4 philips semiconductors product speci?cation uhf power ldmos transistor blf2047l/90 application information rf performance in a common source class-ab circuit. t h =25 c; r th j-h = 0.81 k/w; unless otherwise speci?ed. ruggedness in class-ab operation the blf2047l/90 is capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds = 26 v; i dq = 525 ma; p l = 90 w; f = 2000 mhz (single tone). mode of operation f (mhz) v ds (v) i dq (ma) p l (w) g p (db) h d (%) d im (dbc) two-tone, class-ab f 1 = 2000; f 2 = 2000.1 26 525 90 (pep) >10.5 >30 - 25 handbook, halfpage 0 p l (pep) (w) g p (db) g p 40 80 120 15 5 10 h d (%) h d 50 0 10 20 30 40 mcd933 fig.2 power gain and drain efficiency as functions of peak envelope load power; typical values. v ds = 26 v; i dq = 525 ma; t h 25 c; f 1 = 2000 mhz; f 2 = 2000.1 mhz. handbook, halfpage 0 p l (pep) (w) g p (db) 40 (1) (1) (3) (3) 80 120 15 5 10 h d (%) 50 0 10 20 30 40 mcd928 (2) g p h d (2) fig.3 power gain and drain efficiency as functions of peak envelope load power; typical values. v ds =26v;t h 25 c; f 1 = 2000 mhz; f 2 = 2000.1 mhz. (1) i dq = 650 ma. (2) i dq = 525 ma. (3) i dq = 400 ma.
2000 mar 06 5 philips semiconductors product speci?cation uhf power ldmos transistor blf2047l/90 handbook, halfpage 0 p l (pep) (w) d im (dbc) 40 d 3 d 5 d 7 80 120 0 - 60 - 40 - 20 mcd929 v ds = 26 v; i dq = 525 ma; t h 25 c; f 1 = 2000 mhz; f 2 = 2000.1 mhz. fig.4 intermodulation distortion products as functions of peak envelope load power; typical values. handbook, halfpage 0 p l (pep) (w) d 3 (dbc) 40 (3) (2) (1) 80 120 0 - 60 - 40 - 20 mcd930 fig.5 third-order intermodulation distortion as a function of peak envelope load power; typical values. v ds = 26 v; t h 25 c; f 1 = 2000 mhz; f 2 = 2000.1 mhz. (1) i dq = 400 ma. (2) i dq = 525 ma. (3) i dq = 650 ma. handbook, halfpage 1.8 2 2.2 4 mgt004 2 0 - 2 - 4 z l ( w ) f (ghz) x l r l fig.6 load impedance as a function of frequency (series components); typical values. v ds = 26 v; i d = 525 ma; p l = 90 w; t h 25 c. handbook, halfpage 1.8 2 2.2 4 mgt003 2 0 - 2 z i ( w ) f (ghz) x i r i 6 fig.7 input impedance as a function of frequency (series components); typical values. v ds = 26 v; i d = 525 ma; p l = 90 w; t h 25 c.
2000 mar 06 6 philips semiconductors product speci?cation uhf power ldmos transistor blf2047l/90 handbook, halfpage 05 15 5 10 mcd931 p l (w) g p (db) 15 10 h d (%) 25 0 5 10 15 20 g p h d fig.8 power gain and drain efficiency as functions of average load power; typical values. v ds = 26 v; i dq = 465 ma; t h 25 c; f = 1960 mhz; cdma mode. cdma conditions channel walsh code pilot 0 sync 32 paging 1 traf?c 8 to 13 handbook, halfpage - 80 05 (1) (2) (3) acpr (db) p l (w) 15 0 - 20 - 60 - 40 10 mcd932 fig.9 adjacent channel power reduction as a function of average load power; typical values. v ds = 26 v; i dq = 465 ma; t h 25 c; f = 1960 mhz; cdma mode. (1) channel spacing/bandwidth: 2.25 mhz/1 mhz. (2) channel spacing/bandwidth: 1.25 mhz/12.5 khz. (3) channel spacing/bandwidth: 885 khz/30 khz. cdma conditions channel walsh code pilot 0 sync 32 paging 1 traf?c 8 to 13
2000 mar 06 7 philips semiconductors product speci?cation uhf power ldmos transistor blf2047l/90 handbook, full pagewidth mgt005 c8 c9 c3 l16 l14 l12 l20 l1 l3 l2 l4 l6 l8 l10 l11 l15 l17 l13 l5 l7 l9 l18 l19 c7 c10 c4 c11 input 50 w output 50 w c1 c2 c14 c12 r2 f1 c15 c6 c13 c16 c17 v dc r1 c5 v gate fig.10 2 ghz class-ab test circuit.
2000 mar 06 8 philips semiconductors product speci?cation uhf power ldmos transistor blf2047l/90 list of components see figs 10 and 11. notes 1. american technical ceramics type 100b or capacitor of same quality. 2. american technical ceramics type 100a or capacitor of same quality. 3. the striplines are on a double copper-clad printed-circuit board with teflon dielectric ( e r = 2.2); thickness 0.79 mm. component description value dimensions catalogue no. c1, c2, c7, c8 tekelec variable capacitor; type 37271 0.6 to 4.5 pf c3, c9 multilayer ceramic chip capacitor; note 1 12 pf c4, c10 multilayer ceramic chip capacitor; note 2 12 pf c5, c12, c16 electrolytic capacitor 4.5 m f; 50 v c6, c11, c15 multilayer ceramic chip capacitor; note 1 1 nf c13, c17 electrolytic capacitor 100 m f; 63 v 2222 037 58101 c14 multilayer ceramic chip capacitor 100 nf 2222 581 16641 f1 ferroxcube chip-bead 8ds3/3/8/9-4s2 4330 030 36301 l1 stripline; note 3 50 w 2.9 2.4 mm l2 10.8 w 4 16.3 mm l3 50 w 3.7 2.4 mm l4 6 w 2 30.8 mm l5 50 w 3.6 2.4 mm l6 9 w 3 19.9 mm l7 50 w 7.8 2.4 mm l8 18.5 w 4 8.8 mm l9 24.4 w 5 6.3 mm l10 5.1 w 7 37 mm l11 5.1 w 7 40.9 mm l12 25.4 w 10.1 6mm l13 5.7 w 2.4 32.8 mm l14 25.4 w 6.4 6mm l15 10 w 3.5 20.7 mm l16 50 w 10.8 2.4 mm l17 11.8 w 3 7.9 mm l18 50 w 2.3 2.4 mm l19 50 w 3 2.4 mm l20 50 w 5.5 2.4 mm r1, r2 metal ?lm resistor 10 w , 0.6 w 2322 156 11009
2000 mar 06 9 philips semiconductors product speci?cation uhf power ldmos transistor blf2047l/90 handbook, full pagewidth blf2047l input ph990118 blf2047l/90 output v dd v gs c5 c6 c7 c8 c9 c10 c11 c14 c15 c12 c16 c13 c17 f1 r2 r1 c4 c3 c1 c2 blf2047l input ph990118 blf2047l/90 output 50 95 50 mcd927 fig.11 component layout for 2 ghz class-ab test circuit. dimensions in mm. the components are situated on one side of the copper-clad printed-circuit board with teflon dielectric ( e r = 2.2), thickness 0.79 mm. the other side is unetched and serves as a ground plane.
2000 mar 06 10 philips semiconductors product speci?cation uhf power ldmos transistor blf2047l/90 package outline references outline version european projection issue date iec jedec eiaj sot502a 99-10-13 99-12-28 0 5 10 mm scale flanged ldmost ceramic package; 2 mounting holes; 2 leads sot502a p l a f b d u 2 h q c 1 3 2 d 1 e a c q u 1 c b e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.99 c u 2 0.25 0.51 27.94 qw 2 w 1 f 1.14 0.89 u 1 34.16 33.91 l 5.33 4.32 p 3.38 3.12 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.157 0.01 0.02 1.100 0.045 0.035 1.345 1.335 0.210 0.170 0.133 0.123 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions) w 1 ab m m m
2000 mar 06 11 philips semiconductors product speci?cation uhf power ldmos transistor blf2047l/90 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
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